High Aspect Ratio Pholithography for MEMS Application - Article Example

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High Aspect Ratio Pholithography for MEMS Application

This is the most prominent technique and is widely used and can be used with tall microstructures in the range of 100 micrometers to 1 mm. This method though resulting into long micro structures does not affect the lateral dimension accuracy making it effective method in achieving this objective. However, the method cannot be universally applied due to lack of a synchronized source and the fabrication cost of LIGA that is prohibitive. The use of X-rays from a synchronized source with the capability of giving high intensity, hard x-rays with low divergent properties, makes this method to achieve great results despite these limitations. This led to the development of low cost and commonly available process that would meet the above objectives, and that is close to LIGA. An example was the reactive ion Etching (RIE) of polyamide, which has been presented as a method that could fabricate high aspect ratios structures at the lower costs compared to the above process. This was able to achieve a thickness so of more than 100 micrometers, and an aspect ratio of about 10. This process was however found to be more tedious as it required modification of the RIE machine, and hence not effective. ...
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Review of high-aspect-Ratio photolithography for MEMS application by Miyajima and Mehregany, 1995 High Defining methods for high –aspect ratio photolithography for MEMS applications has of late found grounds and researchers are trying the best methods that might prove to have the high aspect ratio and those that will not involve much logistical problems as well as design up studies…
Author : gmacejkovic

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