You must have Credits on your Balance to download this sample
Semiconductor manufacturing research paper
Engineering and Construction
Pages 12 (3012 words)
1. Plasma/remote plasma oxidation of silicon Remote Plasma-assisted oxidation of Silicon is primarily a process of low temperature, about 300oC for formation of device-quality interfaces on silicon. Plasma oxidation is achieved whenever a silicon substrate which touches plasma (are in contact) is at the floating point during the process of oxidation.
These, however, largely depends on the source of the plasma. The available electric fields for this process is often externally applied though can also be internally generated as a result of the buildup of charge in the growing film surface or in the film itself. The electric fields (EF) are key to the process being that the transport of the charged particle, that is electrons and ions, between the plasma and oxide surface plus the oxide layer is largely dependent on their resulting effect. Fig 4 a) from  Shows an example of a relation of Si-O bond. It exactly shows FWHM, ?, of the Si–O bond stretching mode as a function of annealing temperature for SiOx (x ? 0.15) and (Si, C)Ox (x ? 0.15 and C ? 10 at.%) thin films. The oxidation rate in plasma anodization and oxidation is controlled by the oxidant transport through the growing-oxide layer. Usually, the externally applied electric fields often rise to over 1MV/cm. The oxidant transport and the strong electric fields come together to result into a plasma-assisted oxidation rates at significantly low temperatures and pressures with each being below 600oC and 1 Torr respectively. At atmospheric temperatures, more than 900oC, and pressure, dry oxygen usually have similar rates as those achieved in the process. ...
Not exactly what you need?