...application of SRIM, the electronic stopping power, Se and the nuclear stopping power Sn of occurrence ion in SiO2... SUMMARY OF ARTICLES Li, W., Wang, X., Zhang, X., Zhao, S., Duan, H., & Xue, J. . Mechanism of the Defect Formation in Supported Graphene by Energetic Heavy Ion Irradiation: the Substrate Effect. Scientific reports, 5.
This article involves report on systematic study of experiments on ion irradiation on SiO2-supproted graphene and the comparison of the results of the experiment quantitatively with simulations of molecular dynamics. The work reports an organized tentative study of the fault yield (γ) in graphene below active ion emission. Various ion species are applied ...