These differences are summarized in Table 1.
FPM DRAM: Fast Page Mode Dynamic Random Access Memory was the original form of DRAM. It waits through the entire process of locating a bit of data by column and row and then reading the bit before it starts on the next bit.
EDO DRAM: Extended Data-out Dynamic Random Access Memory does not wait for all of the processing of the first bit before continuing to the next one. As soon as the address of the first bit is located, EDO DRAM begins looking for the next bit. It is about five percent faster than FPM.
SDRAM: Synchronous Dynamic Random Access Memory takes advantage of the burst mode concept to greatly improve performance. It does this by staying on the row containing the requested bit and moving rapidly through the columns, reading each bit as it goes. The idea is that most of the time the data needed by the CPU will be in sequence. SDRAM is about five percent faster than EDO RAM and is the most common form in desktops today.
RDRAM: Rambus Dynamic Random Access Memory is a radical departure from the previous DRAM architecture. Designed by Rambus, RDRAM uses a Rambus in-line memory module (RIMM), which is similar in size and pin configuration to a standard DIMM. What makes RDRAM so different is its use of a special high-speed data bus called the Rambus channel. RDRAM memory chips work in parallel to achieve a data rate of 800 MHz, or 1,600 MBps. ...