Engineering and Construction
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The History and Development of VLSI CMOS Technology Abstract The focus is mostly on the improvements that have occurred in CMOS technology. We explore the different fabrication methods that are used to bring this into a reality. Some of these methods are the SOI-wafer, p-wafer and n-wafer.


Introduction Every day in the word transistors sizes and costs are decreasing while as their speed is increasing. The formation of MOS takes place by superimposing several layers of insulating, conducting and transistor forming materials. The CMOS technology provides two types of transistors namely the n-type transistor and the p-type transistor. Motivation The rapidity with which hardware technology is changing motivated writing of the paper. The main aspect was the reason that the hardware prices are getting cheaper while its quality is improving. History of CMOS The CMOS were invented in 1963 by Frank Wanlass. This technology has been used in every electronically digitally integrated circuit in the modern world. This has been made possible by their operating speed also reduction of size in every subsequent production of CMOS (Thes, 2008). The development in CMOS technology tends to rely on Moore’s law, which stated that, “an approximate 30% reduction in linear dimension and introduction of products with the new technology 2 years after the previous” (Sadan & Current, 2002). Figure 1: The three types of CMOS processing n-well, p-well and twin-well (Baker & Jacob, 2010). SOI (Silicon on Insulator) well fabricator on CMOS It was used in selected discrete and integrated circuits in 1960s. ...
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